Chemical and biological sensors using polycrystalline silicon TFTs

Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors

Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated, adopting the low-temperature (T ≤ 600°C) polycrystalline silicon (polysilicon) technology. Stacked heavily-doped polysilicon source and drain are electrically isolated by an insulating barrier. Multi-teeth configuration is defined by reactive ion etching leading to sidewalls formation on which undo...

Hydrogen-Plasma-Enhanced Crystallization of Hydrogenated Amorphous Silicon Films: Fundamental Mechanisms and Applications

The crystallization of hydrogenated amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECYD) by thermal annealing is of great interest for display and silicon-on-insulator (SOl) technologies. For large area electronics, there has been considerable interest to integrate both a-Si:H TFTs, for low leakage in the OFF state, and poly-Si TFTs, for high drive currents,...

Development of a Self Aligned CMOS Process for Flash Lamp Annealed Polycrystalline Silicon TFTs

Investigation of source-follower type analog buffer using low temperature poly-Si TFTs

A new source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analog buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) is proposed and measured. Threshold voltage compensation circuit with two n-type thin film transistors, a capacitor, and four switc...